[MOS管]STK0760F(韩国光电子AUK)

KSD-T0O006-000 1 STK0760F Advanced Power MOSFET Semiconductor SWITCHING REGULATOR APPLICATIONS Features • High Voltage: BVDSS=600V(M in.) • Low Crss : Crss=12pF(Typ.) • Low gate charge : Qg=28nC(Typ.) • Low RDS(on) :RDS(on)=1.2Ω (Max.) Ordering Ination Type NO. Marking Package Code STK0760F STK0760 TO-220F-3L Outline Dimensions unit : mm 9.80~10.20 1 5 . 4 0 ~ 1 5 . 8 0 Φ 3.05~3.35 1 2 . 2 0 ~ 1 2 . 6 0 9 . 1 0 ~ 9 . 3 0 3 . 4 6 T y p . 1.07 Min. 0.90 Max. 2.54 Typ. 2.54 Typ. 4 . 7 0 M a x . 2 . 7 0 M a x . 0 . 6 0 M a x . 1 2 . 4 0 ~ 1 3 . 0 0 2.60~3.00 0.60 Max. 1 2 3 PIN Connections 1. Gate 2. Drain 3. Source KSD-T0O006-000 2 STK0760F Absolute maximum ratings (Tc=25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS 600 V Gate-source voltage VGSS ±30 V (Tc=25℃ ) 7 A Drain current (DC) ID (Tc=100℃ ) 3.2 A Drain current (Pulsed) * IDM 28 A Drain power dissipation PD 30 W Avalanche current (Single) ② IAS 7 A Single pulsed avalanche energy ② EAS 230 mJ Avalanche current (Repetitive) ① IAR 7 A Repetitive avalanche energy ① EAR 7.5 mJ Junction temperature TJ 150 Storage temperature range Tstg -55~150 °C * Limited by maximum junction temperature Characteristic Symbol Typ. Max Unit Junction-case R th(J-C) - 4.16 Thermal resistance Junction-ambient R th(J-a) - 62.5 ℃ /W KSD-T0O006-000 3 STK0760F Electrical Characteristics (Tc=25°C) Characteristic SymbolTest Condition Min. Typ. Max.Unit Drain-source breakdown voltage BVDSS ID=250µA, VGS=0 600 - - V Gate threshold voltage VGS(th) ID=250µA, VDS= VGS 2.0 - 4.0 V Drain-source cut-off current IDSS VDS=600V, VGS = 0V - - 1 µA Gate leakage current IGSS VDS=0V, VGS=±30V - - ±100 nA Drain-source on-resistance ④ RDS(ON) VGS=10V, ID = 3.5A - 1.0 1.2 Ω Forward transfer conductance ④ gfs VDS=10V, ID = 3.5A - 7.3 - S capacitance Ciss - 950 1430 Output capacitance Coss - 85 130 Reverse transfer capacitance Crss VGS=0V, VDS=25V, f=1MHz - 12 18 pF Turn-on delay time td(on) - 16 - Rise time tr - 60 - Turn-off delay time td(off) - 80 - Fall time tf VDD=300V, ID=7A RG=25Ω ③④ - 65 - ns Total gate charge Qg - 28 42 Gate-source charge Qgs - 5.5 8.3 Gate-drain charge Qgd VDS=300V, VGS=10V ID=7A ③④ - 11 17 nC Source-Drain Diode Ratings and Characteristics (Tc=25°C) Characteristic SymbolTest Condition Min Typ MaxUnit Source current IS - - 7 Source current (Pulsed) ① ISM Integral reverse diode in the MOSFET - - 28 A Forward voltage ④ VSD VGS=0V, IS = 7A - - 1.4 V Reverse recovery time trr - 365 - ns Reverse recovery charge Qrr Is=7A, VGS=0 diS/dt=100A/us - 4.23 - uC Note ; ① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature ② L=9.8mH, IAS=7A, VDD=50V, RG=27Ω ③ Pulse Test : Pulse Width＜ 300us, Duty cycle≤ 2% ④ Essentially independent of operating temperature KSD-T0O006-000 4 STK0760F ℃ Fig. 1 ID - VDS Fig. 4 IS - VSD Fig. 3 RDS(on) - ID Fig. 5 Capacitance - VDS Electrical C